2N3055 NPN Power Transistor TO-3 Metal Package

60.00 Excl. GST 18%

Out of stock

  1. Polarity: NPN
  2. Collector−Emitter Voltage (VCEO): 60V
  3. Continuous Collector Current (Ic): 15A
  4. Power Dissipation (Pd): 115W
  5. Operating Temperature Range: -55 to 200°C
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Description

2N3055 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

Features:

  • Metal TO-3 case
  • Advanced process technology
  • Low error voltage
  • Fast switching speed
  • Full-voltage operation
  • High power and current handling capability

Specifications:

Transistor Polarity NPN
Collector−Emitter Voltage (VCEO) 60V
Collector−Base Voltage (VCBO) 100V
Emitter−Base Voltage (VEBO) 7V
Continuous Collector Current (Ic) 15A
Collector cut-off current (ICEO) 0.7mA
Emitter cut-off current (IEBO) 5mA
Power Dissipation (Pd) 115W
Operating Temperature Range -55 to 200°C
DC Current Gain (hFE) 20-70

Package Includes:

1 x 2N3055 NPN Power Transistor TO-3 Metal Package.

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